by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC, Springfield, Va .
Written in English
|Other titles||Final technical progress for Ka-band GaAs FET monolithic power amplifier development.|
|Statement||Paul Saunier and Hua Quen Tserng.|
|Series||NASA contractor report -- 202348., NASA contractor report -- NASA CR-202348.|
|Contributions||Tserng, Hua Quen., United States. National Aeronautics and Space Administration.|
|The Physical Object|
Ka-Band GaAs FET Monolithic Power Amplifier Development. By Hua Quen Tserng and Paul Saunier. We obtained power of mW with 16 dB gain and % efficiency at 34 GHz with a monolithic micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). Author: Hua Quen Tserng and Paul Saunier. Development of Key Monolithic Circuits to Ka-Band Full MMIC Receivers a GHz medium-power amplifier, a GHz dual-output voltage-controlled oscillator, . High-power GaAs FET Amplifiers John L B Walker This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power. built the first MMIC at X -Band: "Monolithic Broadband GaAs F.E.T. Amplifiers" • In H. Hung et al at COMSAT built the 1 st mm-wave MMIC at 20GHz "Ka-Band monolithic GaAs power FET amplifiers" • MMIC stands for Monolithic Microwave Integrated CircuitsFile Size: 6MB.
Sumitomo Electric provides GaAs power amplifier MMICs mounted in a suitable high frequency package with output power 50mW - 2W at frequencies ranging from C-band to Ka-band. Sumitomo Electric provides various types of packages including highly reliable hermetically sealed types, low cost surface mount types and very low cost QFN types. Abstract: An ultra-compact watt-level Ka-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) is demonstrated using a μm Gallium Arsenide (GaAs) stacked field effect transistor (stacked-FETs) configuration. The fabricated PA exhibits dBm output power, 17 dB gain and 33% power added efficiency (PAE). The bandwidth is from 26 Cited by: This paper describes the design of a GaAs monolithic high power amplifier at Ku band. The chip delivers about 40 dBm of saturated output power, in . Power GaAs C to Ka Band Power Amplifier MMICs (Packages) SUMITOMO ELECTRIC 14 Specifications Part Number Freq. (GHz) P1dB Gain Compression Point *Under Development Note: Tc=+25°C or Ta=+25°C Naming Rules SM M XZ Package Code Monolithic IC Microwave Product Photo Power GaAs Ku to V Band Multiplier MMICs.
Abstract. One of the most important applications of GaAs FETs is in small signal amplifier components. High-frequency low-noise GaAs FETs are used in phase-array radars, signal processors, space based electronic detection systems, tracking Author: Michael Shur. two-stage power amplifier design is included as an example. Finally, MMIC (monolithic microwave integrated circuit) realization of lumped element designs is discussed. With the exception of distributed amplifiers, microwave amplifiers are usually comprised of several GaAs FET devices interconnected with input,File Size: 9MB. Design, Realisation and Test of GaAs-based Monolithic Integrated X-band High-Power Amplifiers PROEFONTWERP ter verkrijging van de graad van doctor aan de Technische Universiteit Eindhoven, op gezag van de Rector Magnificus, R.A. van Santen, voor een commissie aangewezen door het College voor Promoties in het openbaar te verdedigen opCited by: This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal .